Abstract
In this paper, we present results on transmission-energy curves through quantum wells with disordered interfaces. We propose a rule to process experimental data to obtain information about the degree of disorder.
Similar content being viewed by others
References
R Tsu, K Dovidenko, C Lofgren, “A New Type of Superlattice: Semiconductor-Atomic-Superlattice”, Electrochemical Society Proc 22, 294–301 (2000)
R Tsu, “Phenomena in silicon nanostructure devices”, Appl Phys A, 71, 391–402 (2000)
G. Bastard, “Wave Mechanics Applied to Semiconductor Heterostructures”, 1st Edition, Les Editions de Physique, Paris, p 34 (1988)
Raphael Tsu, “A New Type of Superlattice: An epitaxial Semiconductor-Atomic Superlattice, SAS”, Proceedings Materials Research Society, T6, 5, December (1999)
P Vogl, HP Hjalmarson, JD Dow, “A semi-empirical tight-binding theory of the electronic structure of semiconductors”, J Phys Chem Solids 44, 365 (1983)
J Simonin, L Blum, “Departures from ideality in pure ionic solutions using the mean spherical approximation”, Faraday Transactions 1533–1537 (1996)
R Tsu, “A Review on Eptaxial Si/Oxygen Superlattice as: Si Light Emitter and insulating Barrier”, Electrochem Soc Proc 19, 3–16 (1998)
TB Grimley, “Surface States Associated with Adsorbed Atoms”, J Phys Chem Solids 14, 227–232 (1960)
JR Smith, T Perry, A Banerjea, J Ferrante, G Bozzolo, “Equivalent-crystal theory of metal and semiconductor surfaces and defects”, Phys Rev B44, 6444–6465 (1991)
M Posternak, H Krakauer, AJ Freeman, DD Koelling, “Self-consistent electronic structure of surfaces: Surface states and surface resonances on W(001)”, Phys Rev B21, 5601–5612 (1980)
TL Einstein, JR Schrieffer, “Indirect Interaction between Adatoms on a Tight-Binding Solid”, Phys. Rev. B7, 3629–3648 (1973)
D Kalkstein, P Soven, “A Green’s Function Theory of Surface States,” Surf. Sci. 26, 85–99 (1971)
D Papaconstantopoulos, “Handbook of the Band Structure of Elemental Solids,” Plenum Press (1986)
DJ Chadi, “Energy-Minimization Approach to the Atomic Geometry of Semiconductor Surfaces”, Phys Rev Lett 41, 1062 (1978)
DC Allan, EJ Melle, “Surface Vibrational Excitations on Si(001)2x1”, Phys Rev Lett 53, 826 (1984)
G Grosso, C Piermarocchi, “Tight-binding model and interaction scaling laws for silicon and germanium”, Phys Rev B51, 16772 (1995)
M. Allavena, E. Blaisten-Barojas, B. Silvi, “LCAO-MO-SCF Calculation of the Metal-Oxygen Bonding in the M2O2 Series: M = Li,Na,K”, Journal of Chemical Physics 75, 787 (1981).
G Klimeck, RC Bowen, TB Boykin, TA Cwik, “sp3s* Tight-binding parameters for transport simulations in compound semiconductors”, Superlattices and Microstrucutres 27, 77 (2000)
JA Applebaum, DR Hamann, “Surface States and Surface Bonds of Si(111)”, Phys Rev Lett, 31, 106–109 (1973)
Fredy R Zypman, Luis F Fonseca, Yehuda Goldstein, “Theory of Tunneling Spectroscopy”, Physical Review B49(3), 1981–1988 (1994)
Fredy R Zypman, Luis F Fonseca, “Time-independent tunneling for a tip-sample system in Scanning Tunneling Microscopy”, Physical Review B51(4), 2501–2505 (1995)
Fredy R Zypman, Luis F Fonseca, “Electron scattering in STM”, Physical Review B55(23), 15912–15918 (1997)
NW Ashcroft, ND Mermin, “Solid State Physics”, 1st Edition, Saunders College Press, p 176 (1976)
S Datta, “Electronic Transport in Mesosocpic Systems”, Cambridge University Press, Cambridge (1995)
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Nemzer, L., Zypman, F.R. Disorder Characterization of Oxide/Silicon Interfaces from I-V Curves. MRS Online Proceedings Library 786, 31 (2003). https://doi.org/10.1557/PROC-786-E3.1
Published:
DOI: https://doi.org/10.1557/PROC-786-E3.1