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Disorder Characterization of Oxide/Silicon Interfaces from I-V Curves

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Abstract

In this paper, we present results on transmission-energy curves through quantum wells with disordered interfaces. We propose a rule to process experimental data to obtain information about the degree of disorder.

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Nemzer, L., Zypman, F.R. Disorder Characterization of Oxide/Silicon Interfaces from I-V Curves. MRS Online Proceedings Library 786, 31 (2003). https://doi.org/10.1557/PROC-786-E3.1

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  • DOI: https://doi.org/10.1557/PROC-786-E3.1

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